Bandwidth3.1-4.7GHz, Rejection30@DC-2.6GHz, 30@5.6-9.0GHz
High precision machining technology
Low temperature drift, high power.
Ceramic substrate, 50 Ω coplanar waveguide
Gold wire bonding
Items | Parameters | Units |
Center Frequency | 3.9 | GHz |
Bandwidth | 3.1-4.7 | GHz |
Center loss | 2.7 | dB |
Ripple | 1.0 | dB |
VSWR | 1.7:1 | |
Group delay ripple | 0.7 | ns |
Rejection | 30@DC-2.6GHz | dBc |
Rejection | 30@5.6-9.0GHz | dBc |
power | 2W CW |
Work Temp. | -55~+85℃ |
Storage Temp. | -55~+125℃ |
Outline size | L:6.5,W:7.5,h:0.39 |
1: 0.1mm from the side wall, 2.75mm from the surface to the upper cover.
2: Suggest using conductive adhesive for bonding;
3: The chip should be installed on kovar alloy or molybdenum copper;
4: Suggest using a T-shaped structure for microstrip bonding.