带宽通带5.6-18.0GHz, Rejection35@5.1GHz
High precision machining technology
Low temperature drift, high power.
Ceramic substrate, 50 Ω coplanar waveguide
Gold wire bonding
Items | Parameters | Units |
Passband | DC-4.6 | GHz |
带宽通带 | 5.6-18.0 | GHz |
损耗通带 | 3.0 | dB |
Ripple | 3.0 | dB |
VSWR | 2.0:1 | |
Group delay ripple | 0.5 | ns |
Rejection | 35@5.1GHz | dBc |
power | 1W CW |
Work Temp. | -55~+85℃ |
Storage Temp. | -55~+125℃ |
Outline size | L:13.9,W:4.0,h:0.26 |
1: 0.1mm from the side wall, 1.75mm from the surface to the upper cover.
2: Suggest using conductive adhesive for bonding;
3: The chip should be installed on kovar alloy or molybdenum copper;
4: Suggest using a T-shaped structure for microstrip bonding.