PassbandDC-3.0GHz, 4.0-18.0GHz, Rejection30@3.5GHz
High precision machining technology
Low temperature drift, high power.
Ceramic substrate, 50 Ω coplanar waveguide
Gold wire bonding
Items | Parameters | Units |
Passband | DC-3.0 | GHz |
Passband | 4.0-18.0 | GHz |
损耗通带 | 3.0 | dB |
Ripple | 3.0 | dB |
VSWR | 2.0:1 | |
Group delay ripple | 0.8 | ns |
Rejection | 30@3.5GHz | dBc |
power | 1W CW |
Work Temp. | -55~+85℃ |
Storage Temp. | -55~+125℃ |
Outline size | L:14.0,W:5.5,h:0.39 |
1: 0.1mm from the side wall, 2.62mm from the surface to the upper cover.
2: Suggest using conductive adhesive for bonding;
3: The chip should be installed on kovar alloy or molybdenum copper;
4: Suggest using a T-shaped structure for microstrip bonding.