BandwidthDC-17.4GHz, Rejection40@21.6-38.0GHz
High precision machining technology
Low temperature drift, high power.
Ceramic substrate, 50 Ω coplanar waveguide
Gold wire bonding
Items | Parameters | Units |
Center Frequency | 8.7 | GHz |
Bandwidth | DC-17.4 | GHz |
Passband IL | 1.5 | dB |
Ripple | 1.5 | dB |
VSWR | 1.7:1 | |
Group delay ripple | 0.4 | ns |
Rejection | 40@21.6-38.0GHz | dBc |
power | 1W CW |
Work Temp. | -55~+85℃ |
Storage Temp. | -55~+125℃ |
Outline size | L:8.5,W:2.5,h:0.26 |
1: 0.1mm from the side wall, 1.75mm from the surface to the upper cover.
2: Suggest using conductive adhesive for bonding;
3: The chip should be installed on kovar alloy or molybdenum copper;
4: Suggest using a T-shaped structure for microstrip bonding.