Bandwidth12.8-29.0GHz, Rejection28@DC-10.3GHz
High precision machining technology
Low temperature drift, high power.
Ceramic substrate, 50 Ω coplanar waveguide
Gold wire bonding
Items | Parameters | Units |
Center Frequency | 20.9 | GHz |
Bandwidth | 12.8-29.0 | GHz |
Passband IL | 1.5 | dB |
Ripple | 1.0 | dB |
VSWR | 1.7:1 | |
Group delay ripple | 0.3 | ns |
Rejection | 28@DC-10.3GHz | dBc |
power | 1W CW |
Work Temp. | -55~+85℃ |
Storage Temp. | -55~+125℃ |
Outline size | L:3.0,W:2.0,h:0.26 |
1: 0.1mm from the side wall, 2.75mm from the surface to the upper cover.
2: Suggest using conductive adhesive for bonding;
3: The chip should be installed on kovar alloy or molybdenum copper;
4: Suggest using a T-shaped structure for microstrip bonding.