Bandwidth27.5-29.1GHz, Rejection33@DC-26.2GHz, 33@30.6GHz
High precision machining technology
Low temperature drift, high power.
Ceramic substrate, 50 Ω coplanar waveguide
Gold wire bonding
Items | Parameters | Units |
Center Frequency | 28.3 | GHz |
Bandwidth | 27.5-29.1 | GHz |
Center loss | 2.7 | dB |
Ripple | 1.0 | dB |
VSWR | 1.7:1 | |
Group delay ripple | 0.4 | ns |
Rejection | 33@DC-26.2GHz | dBc |
Rejection | 33@30.6GHz | dBc |
power | 2W CW |
Work Temp. | -55~+85℃ |
Storage Temp. | -55~+125℃ |
Outline size | L:5.5,W:2.5,h:0.26 |
1: 0.1mm from the side wall, 2.75mm from the surface to the upper cover.
2: Suggest using conductive adhesive for bonding;
3: The chip should be installed on kovar alloy or molybdenum copper;
4: Suggest using a T-shaped structure for microstrip bonding.