Bandwidth5.7-8.3GHz, Rejection40@DC-4.4GHz, 40@9.8-16.5GHz
High precision machining technology
Low temperature drift, high power.
Ceramic substrate, 50 Ω coplanar waveguide
Gold wire bonding
Items | Parameters | Units |
Center Frequency | 7.0 | GHz |
Bandwidth | 5.7-8.3 | GHz |
Center loss | 2.5 | dB |
Ripple | 1.0 | dB |
VSWR | 1.7:1 | |
Group delay ripple | 0.5 | ns |
Rejection | 40@DC-4.4GHz | dBc |
Rejection | 40@9.8-16.5GHz | dBc |
power | 2W CW |
Work Temp. | -55~+85℃ |
Storage Temp. | -55~+125℃ |
Outline size | L:7.0,W:4.9,h:0.26 |
1:芯片建议分腔使用,单侧距侧壁0.1mm,表面距上盖2.75mm,端口可互换;
2: Suggest using conductive adhesive for bonding;
3: The chip should be installed on kovar alloy or molybdenum copper;
4: Suggest using a T-shaped structure for microstrip bonding.